PART |
Description |
Maker |
K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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IDT71124 IDT71124S12Y IDT71124S12YI IDT71124S15Y I |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout 128K x 8 Static RAM Center Pwr & Gnd Pinout
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Integrated Device Technology, Inc. IDT[Integrated Device Technology]
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IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
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Integrated Device Techn... Integrated Device Technology, Inc. IDT
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CY7C1019V33-15VC CY7C1019V33L-12VC CY7C1019V33L-15 |
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 From old datasheet system
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
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NEC
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IDT7009 IDT7009L15PF IDT7009L15PFI IDT7009L20PF ID |
USBF TV Field Memory Key 2048MB RAM Nickel RoHS Compliant: Yes From old datasheet system HIGH-SPEED 128K x 8 DUAL-PORT STATIC RAM 128K x 8 Dual-Port RAM
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Integrated Device Technology, Inc. IDT[Integrated Device Technology]
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W24L010A W24L010A-10 W24L010A-12 W24L010A-15 W24L0 |
From old datasheet system Circular Connector; No. of Contacts:4; Series:MS27474; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-4 RoHS Compliant: No 128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDIP32
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WINBOND[Winbond] Winbond Electronics Corp Winbond Electronics, Corp.
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15CY7C109B-15VC CY7C109B-35VC CY7C109BL-15VC CY7C1 |
128K x 8 Static RAM009B 128K x 8 Static RAM(221.62 k)
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Cypress
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IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128K x 8 Ultra Low Power and Low VCC SRAM From old datasheet system 55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
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ICSI[Integrated Circuit Solution Inc]
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TC518128AFW-12 TC518128AF-80 TC518128APL-12 |
128K X 8 PSEUDO STATIC RAM, 120 ns, PDSO32 128K X 8 PSEUDO STATIC RAM, 80 ns, PDSO32 128K X 8 PSEUDO STATIC RAM, 120 ns, PDIP32
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CY7C109V33 CY7C1009V33 7C109V33 CY7C109V33-15VC CY |
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 25 ns, PDSO32 From old datasheet system
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CYPRESS SEMICONDUCTOR CORP Cypress Semiconductor, Corp. CYPRESS[Cypress Semiconductor]
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